Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) Thermoelectric Devices
| العنوان: | Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) Thermoelectric Devices |
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| المؤلفون: | Ibrahim M. Abdel-Motaleb, Syed M. Qadri |
| المصدر: | Journal of Electronics Cooling and Thermal Control. :63-77 |
| بيانات النشر: | Scientific Research Publishing, Inc., 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Antimony telluride, Fabrication, Materials science, business.industry, 0211 other engineering and technologies, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Pulsed laser deposition, chemistry.chemical_compound, chemistry, Thermoelectric effect, Optoelectronics, Bismuth telluride, Wafer, 021108 energy, 0210 nano-technology, business, Layer (electronics) |
| الوصف: | We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV. |
| تدمد: | 2162-6170 2162-6162 |
| DOI: | 10.4236/jectc.2017.73006 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7149b0a767c7d32f27916c2584084513 https://doi.org/10.4236/jectc.2017.73006 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........7149b0a767c7d32f27916c2584084513 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21626170 21626162 |
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| DOI: | 10.4236/jectc.2017.73006 |