High-temperature (>500°C) reconfigurable computing using silicon carbide NEMS switches

التفاصيل البيبلوغرافية
العنوان: High-temperature (>500°C) reconfigurable computing using silicon carbide NEMS switches
المؤلفون: Aswin Krishna, Te-Hao Lee, Seetharam Narasimhan, Francis Wolff, Srihari Rajgopal, Swamp Bhunia, Xinmu Wang, Mehran Mehregany
المصدر: DATE
بيانات النشر: IEEE, 2011.
سنة النشر: 2011
مصطلحات موضوعية: Nanoelectromechanical systems, business.industry, Computer science, Electrical engineering, Wide-bandgap semiconductor, Reconfigurable computing, chemistry.chemical_compound, chemistry, Device material, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Silicon carbide, Electronics, business, Field-programmable gate array, Leakage (electronics), Electronic circuit
الوصف: Many industrial systems, sensors and advanced propulsion systems demand electronics capable of functioning at high ambient temperature in the range of 500–600°C. Conventional Si-based electronics fail to work reliably at such high temperature ranges. In this paper we propose, for the first time, a high-temperature reconfigurable computing platform capable of operating at temperature of 500°C or higher. Such a platform is also amenable for reliable operation in high-radiation environment. The hardware reconfigurable platform follows the interleaved architecture of conventional Field Programmable Gate Array (FPGA) and provides the usual benefits of lower design cost and time. However, high-temperature operation is enabled by choice of a special device material, namely silicon carbide (SiC), and a special switch structure, namely Nano-Electro-Mechanical-System (NEMS) switch. While SiC provides excellent mechanical and chemical properties suitable for operation at extreme harsh environment, NEMS switch provides low-voltage operation, ultra-low leakage and radiation hardness. We propose a novel multi-layer NEMS switch structure and efficient design of each building block of FPGA using nanoscale SiC NEMS switches. Using measured switch parameters from a number of SiC NEMS switches we fabricated, we compare the power, performance and area of an all-mechanical FPGA with alternative implementations for several benchmark circuits.
DOI: 10.1109/date.2011.5763175
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6b7c473764842c49ef8fa90d3b66a90f
https://doi.org/10.1109/date.2011.5763175
رقم الانضمام: edsair.doi...........6b7c473764842c49ef8fa90d3b66a90f
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.1109/date.2011.5763175