Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

التفاصيل البيبلوغرافية
العنوان: Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
المؤلفون: William J. Schaff, Huaixian Lu, Sylvie Contreras, Leszek Konczewicz, Tadeusz Suski, L. H. Dmowski
المصدر: physica status solidi (b). 250:746-749
بيانات النشر: Wiley, 2013.
سنة النشر: 2013
مصطلحات موضوعية: 010302 applied physics, Work (thermodynamics), Materials science, Condensed matter physics, Polarity (physics), Hydrostatic pressure, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Thermal conduction, 01 natural sciences, Buffer (optical fiber), Electronic, Optical and Magnetic Materials, Magnetic field, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology
الوصف: The importance of multicarrier contributions to electrical conductivity in epitaxial InN layered structures has been debated for last few years. In this work hydrostatic pressure was used to verify multicarrier conduction in nominally undoped InN layers with In-growth polarity. To distinguish between different types of carriers the mobility spectrum analysis was applied, based on conductivity tensor components σxx and σxy measured as a function of magnetic field. Different contributions to the electric conduction (including the surprising presence of holes) and their evolution with pressure have been shown.
تدمد: 0370-1972
DOI: 10.1002/pssb.201200508
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6768fb2d53874ef7fd9355944b88a48c
https://doi.org/10.1002/pssb.201200508
Rights: CLOSED
رقم الانضمام: edsair.doi...........6768fb2d53874ef7fd9355944b88a48c
قاعدة البيانات: OpenAIRE
الوصف
تدمد:03701972
DOI:10.1002/pssb.201200508