Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers
| العنوان: | Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers |
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| المؤلفون: | Masakazu Sugiyama, Ryo Iida, Masafumi Yokoyama, S. Takagi, Yuji Urabe, M. Takenaka, M. Hata, Hideki Takagi, Yoshiaki Nakano, N. Fukuhara, Noriyuki Taoka, Sanghyeon Kim, T. Yasuda, Hisashi Yamada |
| المصدر: | IEEE Electron Device Letters. 32:1218-1220 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | Electron mobility, Materials science, Silicon, Wafer bonding, business.industry, Doping, chemistry.chemical_element, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, MOSFET, Electronic engineering, Optoelectronics, Wafer, Electrical and Electronic Engineering, business, Indium gallium arsenide |
| الوصف: | We have demonstrated sub-10-nm extremely thin body (ETB) InGaAs-on-insulator (InGaAs-OI) nMOSFETs on Si wafers with Al2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding process. We have fabricated the ETB InGaAs-OI nMOSFETs with channel thicknesses of 9 and 3.5 nm. The 9-nm-thick ETB InGaAs-OI n MOSFETs with a doping concentration (ND) of 1019 cm-3 exhibit a peak electron mobility of 912 cm2/V·s and a mobility enhancement factor of 1.7 times against the Si nMOSFET at a surface carrier density (Ns) of 3 ×1012 cm-2. In addition, it has been found that, owing to Al2O3 UTBOX layers, the double-gate operation improves the cutoff properties. As a result, the highest on-current to the lowest off-current (Ion/Ioff) ratio of approximately 107 has been obtained in the 3.5-nm-thick ETB InGaAs-OI nMOSFETs. These results indicate that the high-mobility III-V nMOSFETs can be realized even in sub-10-nm-thick channels. |
| تدمد: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2158568 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::611b1f16fb7cb26e8e9f4ec10e9794d3 https://doi.org/10.1109/led.2011.2158568 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........611b1f16fb7cb26e8e9f4ec10e9794d3 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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| DOI: | 10.1109/led.2011.2158568 |