Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
| العنوان: | Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors |
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| المؤلفون: | Vahid Mirkhani, Burcu Ozden, Ayayi C. Ahyi, Sunil Uprety, Kosala Yapabandara, Kyunghyuk Kim, Minseo Park, Min P. Khanal |
| المصدر: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:03D107 |
| بيانات النشر: | American Vacuum Society, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Photoluminescence, Transconductance, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, symbols.namesake, 0103 physical sciences, Materials Chemistry, Irradiation, Electrical and Electronic Engineering, Spectroscopy, Instrumentation, 010302 applied physics, business.industry, Process Chemistry and Technology, Heterojunction, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Full width at half maximum, symbols, Optoelectronics, 0210 nano-technology, business, Raman spectroscopy |
| الوصف: | A comparative study on the direct-current (dc) electrical performance and optical characteristics of unirradiated and 120 MRad 60Co-gamma-ray (γ-ray) irradiated AlGaN/GaN high electron mobility transistors (HEMTs) was performed. The devices fabricated on an irradiated HEMT epilayer structure show slight degradation/alteration in the dc characteristics such as source–drain current–voltage (IDS-VDS), transfer (IDS-VGS), transconductance, and gate current–voltage, indicating the presence of radiation-induced defects. Also, a shift in flat band voltage was observed from the capacitance-voltage measurements. Micro-Raman spectroscopy and photoluminescence (PL) spectroscopy were used to compare the crystal quality of the heterojunction. No shift in the Raman peak frequency position was observed in both the unirradiated and irradiated samples, which implies that the irradiation did not produce an additional strain to the HEMT layers. However, the full width at half maximum of the Raman and near-band-edge PL peaks... |
| تدمد: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.4979976 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5d5832079206fed9bd2fd3b7ae030189 https://doi.org/10.1116/1.4979976 |
| رقم الانضمام: | edsair.doi...........5d5832079206fed9bd2fd3b7ae030189 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21662754 21662746 |
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| DOI: | 10.1116/1.4979976 |