GaN-based distributed feedback laser diodes grown on Si
| العنوان: | GaN-based distributed feedback laser diodes grown on Si |
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| المؤلفون: | Yongjun Tang, Meixin Feng, Jianxun Liu, Xiujian Sun, Shumeng Yan, Shizhao Fan, Qian Sun, Shuming Zhang, Masao Ikeda, Hui Yang |
| المصدر: | Journal of Physics D: Applied Physics. 55:195103 |
| بيانات النشر: | IOP Publishing, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Acoustics and Ultrasonics, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials |
| الوصف: | This letter reports on the results of room-temperature electrically injected GaN-based distributed feed-back laser diodes (LDs) grown on Si. A hundred pairs of high-order sidewall gratings were prepared by dry-etching along the ridge to select only single mode, and tetramethyl ammonium hydroxide polishing technology was adopted to remove the etching damage and make the sidewall smooth and steep. As a result, we have successfully fabricated GaN-based distributed feedback LDs grown on Si with a side-mode suppression ratio of ∼10 dB. Further analysis revealed that the fabrication of gratings reduced the injection efficiency and increased the optical loss, which deteriorated the device performance. Further improvements of the laser material quality and device fabrication are underway. |
| تدمد: | 1361-6463 0022-3727 |
| DOI: | 10.1088/1361-6463/ac4f92 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5cb1cd8cc45c20a25cdb9680f4e0b0bd https://doi.org/10.1088/1361-6463/ac4f92 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........5cb1cd8cc45c20a25cdb9680f4e0b0bd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13616463 00223727 |
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| DOI: | 10.1088/1361-6463/ac4f92 |