Transport Gap vis-à-vis Electrical Bistability of Alloyed ZnxCd1−xS (x = 0 to 1) Quantum Dots
| العنوان: | Transport Gap vis-à-vis Electrical Bistability of Alloyed ZnxCd1−xS (x = 0 to 1) Quantum Dots |
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| المؤلفون: | Amlan J. Pal, Batu Ghosh |
| المصدر: | The Journal of Physical Chemistry C. 114:13583-13588 |
| بيانات النشر: | American Chemical Society (ACS), 2010. |
| سنة النشر: | 2010 |
| مصطلحات موضوعية: | Materials science, Condensed matter physics, Electrical bistability, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Thermal conduction, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, General Energy, Quantum dot, Quantum dot laser, law, Monolayer, Electrode, Physical and Theoretical Chemistry, Scanning tunneling microscope |
| الوصف: | We study a correlation between electrical bistability and transport gap of II−VI semiconducting quantum dots. We first grow alloyed ZnxCd1−xS (x = 0 to 1) quantum dots for different values of x, functionalize them with suitable (anionic) stabilizers, and form their monolayer on an electrode surface via electrostatic assembly. We characterize the monolayers of the quantum dots by scanning tunneling microscopy. Current−voltage characteristics of the monolayers evidence electrical bistability and memory phenomena that depend on composition or Zn-content of the quantum dots. The dependence is due to the fact that an addition of Zn in ZnxCd1−xS introduces trap-states, which assist the process of electrical bistability and play a major role in the conduction process of high-conducting states of quantum dots. Transport gap, which depends on the composition of the quantum dots, also responds to the electrical bistability; for all the quantum dots, the gap decreases during the transition from a low- to a high-cond... |
| تدمد: | 1932-7455 1932-7447 |
| DOI: | 10.1021/jp1048056 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5c980701607f91f69f734460415a7f57 https://doi.org/10.1021/jp1048056 |
| رقم الانضمام: | edsair.doi...........5c980701607f91f69f734460415a7f57 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19327455 19327447 |
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| DOI: | 10.1021/jp1048056 |