Impact of Device Geometrical Parameter Variation on RF Stability of SELBOX Inverted-T Junctionless FINFET
| العنوان: | Impact of Device Geometrical Parameter Variation on RF Stability of SELBOX Inverted-T Junctionless FINFET |
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| المؤلفون: | Veerati Raju, Rajeev PankajNelapati, K. Sivasankaran |
| المصدر: | Silicon. 13:2605-2617 |
| بيانات النشر: | Springer Science and Business Media LLC, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Work (thermodynamics), Operating point, Materials science, business.industry, 02 engineering and technology, Process variable, 021001 nanoscience & nanotechnology, 01 natural sciences, Stability (probability), Signal, Electronic, Optical and Magnetic Materials, Critical frequency, 0103 physical sciences, Optoelectronics, Inverted t, 0210 nano-technology, business, Electronic circuit |
| الوصف: | In recent times, the role of FINFET devices is increasing in the field of RF-IC design for realizing the high frequency circuits. As a result, high frequency characteristics including RF stability needs to be investigated carefully. Hence this work presents the impact of device geometrical and process parameter variations on the RF stability of 20 nm SELBOX Inverted-T Junctionless FINFET (SELBOX ITJLFET). The stability factor (K), critical frequency (fk) and its dependency on small signal parameters (SSP) are investigated by varying the device and process parameters like Gate Workfunction (GWF), fin height (Hfin), fin width (Wfin), Source underlap spacer length (LUS) and SELBOX length (LG). In addition, the relation between the bias and the stability factor of the device is also studied to identify the bias operating point in a stability perspective. From the simulation results, it is found that larger the SELBOX and LUS, lower the critical frequency and thereby making the device unconditionally stable at lower frequencies. Finally, an optimized design guideline is proposed, which makes the device suitable for high bandwidth applications. |
| تدمد: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-020-00616-w |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::59ff85113c3baecee0c020bf0355544c https://doi.org/10.1007/s12633-020-00616-w |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........59ff85113c3baecee0c020bf0355544c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18769918 1876990X |
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| DOI: | 10.1007/s12633-020-00616-w |