Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy–scanning tunneling microscopy study

التفاصيل البيبلوغرافية
العنوان: Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy–scanning tunneling microscopy study
المؤلفون: Vincent LaBella, D. W. Bullock, Paul Thibado, Z. Ding, W. G. Harter, C. Emery
المصدر: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1526-1531
بيانات النشر: American Vacuum Society, 2000.
سنة النشر: 2000
مصطلحات موضوعية: Surface diffusion, Number density, Materials science, Condensed matter physics, Monte Carlo method, Surfaces and Interfaces, Substrate (electronics), Condensed Matter Physics, Molecular physics, Surfaces, Coatings and Films, law.invention, Gallium arsenide, chemistry.chemical_compound, chemistry, law, Diffusion (business), Scanning tunneling microscope, Molecular beam epitaxy
الوصف: The migration of individual Ga atoms on the technologically important GaAs(001)-(2×4) reconstructed surface has been studied as a function of substrate temperature and As4 pressure using a combined molecular beam epitaxy and scanning tunneling microscope ultrahigh vacuum multichamber facility. We have deposited 10% of a plane of Ga onto a GaAs(001) surface with a low defect density ( 0.5 μm) to avoid the influence of surface defects like step edges and vacancies. Both the island number density and the geometry are measured and compared to Monte Carlo solid-on-solid simulations. Basic diffusion parameters, such as the activation energy, directional hopping-rate ratio, directional sticking-probability ratio, etc., are reported.
تدمد: 1520-8559
0734-2101
DOI: 10.1116/1.582379
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::57c953d74316c213fe74ef82ca488ed3
https://doi.org/10.1116/1.582379
رقم الانضمام: edsair.doi...........57c953d74316c213fe74ef82ca488ed3
قاعدة البيانات: OpenAIRE
الوصف
تدمد:15208559
07342101
DOI:10.1116/1.582379