Capacitive Trench-Based Charge Transfer Device
| العنوان: | Capacitive Trench-Based Charge Transfer Device |
|---|---|
| المؤلفون: | Francois Roy, Pierre Touron, Cedric Virmontois, Stephane Demiguel, Olivier Marcelot, Pierre Magnan |
| المصدر: | IEEE Electron Device Letters. 41:1388-1391 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Physics, Silicon, business.industry, Capacitive sensing, chemistry.chemical_element, Charge (physics), Electrostatics, 01 natural sciences, Electric charge, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Trench, Optoelectronics, Charge-coupled device, Electric potential, Electrical and Electronic Engineering, business |
| الوصف: | This paper presents a new charge coupled device (CCD) based on capacitive deep trench isolation (CDTI), developed in CMOS technology. The 2 phase device features collection, storage and transfer in the silicon volume. Full Well Charge (FWC) of about 2.6ke-/ $\mu \text{m}^{2}$ and Charge Transfer Inefficiency (CTI) below $1\times 10^{-4}$ have been measured via electrical charge injection on pixels with pitches ranging from 12 to $48~\mu \text{m}$ . |
| تدمد: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2020.3014431 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::54ecc2f8e12ddd31b2bf5d68df603e3e https://doi.org/10.1109/led.2020.3014431 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........54ecc2f8e12ddd31b2bf5d68df603e3e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
|---|---|
| DOI: | 10.1109/led.2020.3014431 |