Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy
| العنوان: | Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy |
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| المؤلفون: | Zhengwei Chen, Xu Wang, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Kazuo Nishihagi, Katsuhiko Saito, Makoto Arita |
| المصدر: | Applied Physics Letters. 109:102106 |
| بيانات النشر: | AIP Publishing, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Silicon, Band gap, business.industry, Analytical chemistry, chemistry.chemical_element, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Band offset, Semimetal, Pulsed laser deposition, chemistry, X-ray photoelectron spectroscopy, 0103 physical sciences, Optoelectronics, Thin film, 0210 nano-technology, business |
| الوصف: | Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type Ι heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure. |
| تدمد: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4962538 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::54da6f3a4f8b5cb1b5e8d809810286dc https://doi.org/10.1063/1.4962538 |
| رقم الانضمام: | edsair.doi...........54da6f3a4f8b5cb1b5e8d809810286dc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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| DOI: | 10.1063/1.4962538 |