Plasma doping control by mass metrology

التفاصيل البيبلوغرافية
العنوان: Plasma doping control by mass metrology
المؤلفون: G. Vecchio, Wilfried Vandervorst, J.-L. Everaert, G. Zschatzsch, L. Cunnane
المصدر: 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
بيانات النشر: IEEE, 2008.
سنة النشر: 2008
مصطلحات موضوعية: Argon, Materials science, Dopant, Annealing (metallurgy), fungi, Doping, Analytical chemistry, food and beverages, chemistry.chemical_element, Plasma, Plasma-immersion ion implantation, Metrology, chemistry, Sheet resistance
الوصف: We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion can occur simultaneous with implantation, a method is presented how to distinguish these basic reactions. Mass monitoring before and after anneal, reveals that As is very volatile. In the search for a solution we present a post treatment which reduces this loss, hence achieving lower sheet resistance.
DOI: 10.1109/rtp.2008.4690544
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4a7785090a112f5c83fed06a7ab6d0a6
https://doi.org/10.1109/rtp.2008.4690544
رقم الانضمام: edsair.doi...........4a7785090a112f5c83fed06a7ab6d0a6
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.1109/rtp.2008.4690544