We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low R on A of 3.3 mΩcm2 at room temperature (RT) and 6.2 mΩcm2 at 175 °C. The small reverse recovery charge of SJ devices at RT and 175 °C was realized by injection level suppression. Owing to these advantages, superior total power loss was estimated when the SJ-devices were operated as a half-bridge synchronous rectifier.