Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
| العنوان: | Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma |
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| المؤلفون: | Kohei Watanuki, Hirokazu Asahara, Atsutoshi Inokuchi, Tadahiro Ohmi, Masaki Hirayama, Akinobu Teramoto |
| المصدر: | Japanese Journal of Applied Physics. 47:2994-2998 |
| بيانات النشر: | IOP Publishing, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), Silicon, Annealing (metallurgy), Inorganic chemistry, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Zinc, Chemical vapor deposition, Epitaxy, law.invention, chemistry, Chemical engineering, law, Metalorganic vapour phase epitaxy, Crystallization, Plasma processing |
| الوصف: | The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO2 and Si3N4 can be formed at low temperatures of under 500–600 °C. In this study, we applied radical reaction based semiconductor manufacturing to compound semiconductor of ZnO. The characteristics of ZnO films grown by a newly developed plasma enhanced metal organic chemical vapor deposition (MOCVD) employing microwave excited high-density plasma are good. The film formed on a-plane sapphire is epitaxially oriented in c-axis direction, and the composition is similar to ZnO substrate grown by hydrothermal method. The mobility of grown film at around 400 °C is 23 cm2/(Vs), and it is increased to 46 cm2/(Vs) by 700 °C annealing. The carbon concentration in the films can be reduced by the selection of a zinc precursor and the optimization of process conditions. The active species of plasma are effective for the crystallization of films. |
| تدمد: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.47.2994 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4363694fa7ff4551bea1b5facbf05556 https://doi.org/10.1143/jjap.47.2994 |
| رقم الانضمام: | edsair.doi...........4363694fa7ff4551bea1b5facbf05556 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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| DOI: | 10.1143/jjap.47.2994 |