This work describes a CMOS RF power detector with an extremely low temperature drift, less than ± 0.5 dB in a wide temperature range, from - 40°C to 125°C. The power detector is based on a biased diode detector with a load resistance, and it is implemented in 55-nm technology which shows a wide dynamic range of 24 dBm over a large operating frequency, from 1 GHz to 14 GHz.