Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films
| العنوان: | Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films |
|---|---|
| المؤلفون: | Shengbai Zhang, Su-Huai Wei, Rommel Noufi, Sukit Limpijumnong, Xiaonan Li, Teresa M. Barnes, Timothy J. Coutts, Sally Asher |
| المصدر: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1213-1217 |
| بيانات النشر: | American Vacuum Society, 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | Materials science, Analytical chemistry, Infrared spectroscopy, chemistry.chemical_element, Surfaces and Interfaces, Chemical vapor deposition, Condensed Matter Physics, Surfaces, Coatings and Films, Carbon film, X-ray photoelectron spectroscopy, chemistry, Metalorganic vapour phase epitaxy, Thin film, Fourier transform infrared spectroscopy, Carbon |
| الوصف: | Carbon is a typical impurity in thin films fabricated by metal-organic chemical-vapor deposition (MOCVD). The role of carbon in undoped and nitrogen-doped ZnO thin films was studied experimentally and theoretically to understand the possible compensation effects. ZnO thin films are fabricated by low-pressure MOCVD using diethylzinc, nitric oxide (for nitrogen-doped films), or oxygen precursors (for undoped films). Compared with sputtering-fabricated ZnO film, the carbon concentration in the MOCVD-fabricated ZnO film is very high. Furthermore, the MOCVD-fabricated ZnO:N film has an even higher carbon concentration than the undoped ZnO. Considering the signal observed previously by Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy, it is possible that the incorporated carbon has formed complexes with doped nitrogen. The first-principles calculations predict that the formation energy for carbon interstitial (Ci) is relatively high. However, due to the large binding energy between C... |
| تدمد: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.2167981 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3bf77d688ac51d0157b7006a17b6c33a https://doi.org/10.1116/1.2167981 |
| رقم الانضمام: | edsair.doi...........3bf77d688ac51d0157b7006a17b6c33a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15208559 07342101 |
|---|---|
| DOI: | 10.1116/1.2167981 |