The structure of Ni and Si Ni contacts to SiC was studied by transmission electron microscopy. Annealed Ni SiC contacts showed ohmic behaviour, but Ni proved to be reactive with SiC resulting in the formation of nickel silicide together with the formation of a high number of voids. Deposition and annealing of Si Ni multilayer contacts resulted in a void free Ni2Si contact layer on SiC, while also exhibiting low contact resistivity.