Sn doped ZnO thin film deposition using thermionic vacuum arc technique

التفاصيل البيبلوغرافية
العنوان: Sn doped ZnO thin film deposition using thermionic vacuum arc technique
المؤلفون: Şadan Korkmaz, Caner Musaoğlu, Saliha Elmas, Mustafa Özgür, Reza Mohammadigharehbagh, Soner Özen, Suat Pat, Uğur Demirkol
المصدر: Journal of Alloys and Compounds. 774:1017-1023
بيانات النشر: Elsevier BV, 2019.
سنة النشر: 2019
مصطلحات موضوعية: Materials science, Silicon, Mechanical Engineering, technology, industry, and agriculture, Metals and Alloys, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Vacuum arc, Substrate (electronics), 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, symbols.namesake, chemistry, Mechanics of Materials, Materials Chemistry, symbols, Crystallite, Thin film, 0210 nano-technology, Raman spectroscopy, Layer (electronics), Diffractometer
الوصف: Sn doped ZnO thin films were prepared on glass, polyethylene terephthalate (PET) and silicon substrate make use of the thermionic vacuum arc technique and their structural, morphological, optical properties were investigated with various methods. The surface and microstructural properties of the Sn doped ZnO thin films were investigated by X-ray diffractometer, field emission scanning electron microscopy, atomic force microscopy, UV–visible spectroscopy, and Raman spectroscopy. According to the obtained results, all deposited films are in polycrystalline form with large crystallites. Due to larger crystallites on a deposited layer on glass and Si substrates, resistivity was found lower than deposited layer on PET substrate.
تدمد: 0925-8388
DOI: 10.1016/j.jallcom.2018.10.020
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::394086fa3dd0b58c47abda4b187b35f7
https://doi.org/10.1016/j.jallcom.2018.10.020
Rights: CLOSED
رقم الانضمام: edsair.doi...........394086fa3dd0b58c47abda4b187b35f7
قاعدة البيانات: OpenAIRE
الوصف
تدمد:09258388
DOI:10.1016/j.jallcom.2018.10.020