التفاصيل البيبلوغرافية
العنوان: |
Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods |
المؤلفون: |
O. Fursenko, Peter Zaumseil, Peter Formanek, R. Kurps, D. Krüger |
المصدر: |
Solid State Phenomena. :473-482 |
بيانات النشر: |
Trans Tech Publications, Ltd., 2003. |
سنة النشر: |
2003 |
مصطلحات موضوعية: |
X-ray reflectivity, Optics, Materials science, business.industry, Heterojunction bipolar transistor, Optoelectronics, General Materials Science, Condensed Matter Physics, business, Atomic and Molecular Physics, and Optics |
تدمد: |
1662-9779 |
DOI: |
10.4028/www.scientific.net/ssp.95-96.473 |
URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::363f289447b90f182576be877c75e411 https://doi.org/10.4028/www.scientific.net/ssp.95-96.473 |
Rights: |
CLOSED |
رقم الانضمام: |
edsair.doi...........363f289447b90f182576be877c75e411 |
قاعدة البيانات: |
OpenAIRE |