Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

التفاصيل البيبلوغرافية
العنوان: Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
المؤلفون: O. Fursenko, Peter Zaumseil, Peter Formanek, R. Kurps, D. Krüger
المصدر: Solid State Phenomena. :473-482
بيانات النشر: Trans Tech Publications, Ltd., 2003.
سنة النشر: 2003
مصطلحات موضوعية: X-ray reflectivity, Optics, Materials science, business.industry, Heterojunction bipolar transistor, Optoelectronics, General Materials Science, Condensed Matter Physics, business, Atomic and Molecular Physics, and Optics
تدمد: 1662-9779
DOI: 10.4028/www.scientific.net/ssp.95-96.473
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::363f289447b90f182576be877c75e411
https://doi.org/10.4028/www.scientific.net/ssp.95-96.473
Rights: CLOSED
رقم الانضمام: edsair.doi...........363f289447b90f182576be877c75e411
قاعدة البيانات: OpenAIRE
الوصف
تدمد:16629779
DOI:10.4028/www.scientific.net/ssp.95-96.473