Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering
| العنوان: | Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering |
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| المؤلفون: | J. G. Cook, S. R. Das, David J. Lockwood, S. Rolfe, John P. McCaffrey |
| المصدر: | MRS Proceedings. 216 |
| بيانات النشر: | Springer Science and Business Media LLC, 1990. |
| سنة النشر: | 1990 |
| مصطلحات موضوعية: | Secondary Ion Mass Spectroscopy, symbols.namesake, Materials science, Sputtering, Analytical chemistry, symbols, Substrate (electronics), Epitaxy, Raman spectroscopy, Single crystal, Deposition (law), Cadmium telluride photovoltaics |
| الوصف: | Heteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt. |
| تدمد: | 1946-4274 0272-9172 |
| DOI: | 10.1557/proc-216-245 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2f2778174b84307d2ef66897931139d6 https://doi.org/10.1557/proc-216-245 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........2f2778174b84307d2ef66897931139d6 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19464274 02729172 |
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| DOI: | 10.1557/proc-216-245 |