Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters
| العنوان: | Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
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| المؤلفون: | I. P. Smirnova, Filipp E. Komissarenko, L. B. Karlina, I. P. Soshnikov, A. S. Vlasov, M. Z. Shvarts, A. V. Ankudinov |
| المصدر: | Semiconductors. 53:1705-1708 |
| بيانات النشر: | Pleiades Publishing Ltd, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Nanostructure, Materials science, Scanning electron microscope, chemistry.chemical_element, Quantum yield, 02 engineering and technology, engineering.material, 01 natural sciences, law.invention, Coating, law, 0103 physical sciences, 010302 applied physics, business.industry, Photoresistor, Photovoltaic system, Converters, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, engineering, Optoelectronics, 0210 nano-technology, business, Indium |
| الوصف: | The possibility of using lateral Ga(In)AsP nanostructures grown by the catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for photovoltaic devices is considered for the first time. It is shown that, at a fixed growth temperature, it is possible to control the surface morphology by changing the growth duration. The surface morphology is examined by scanning electron and atomic force microscopies. It is shown that the antireflection properties of the surface in the range 400–800 nm are related to its structure. The use of such a coating in GaAs-based photocells demonstrated a significant increase in the external quantum yield of photovoltaic converters. |
| تدمد: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782619160115 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2f0ae893e677b79983eae7b8256d57a6 https://doi.org/10.1134/s1063782619160115 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........2f0ae893e677b79983eae7b8256d57a6 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10906479 10637826 |
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| DOI: | 10.1134/s1063782619160115 |