A new exposure method, which provides both high X-ray intensity and dose uniformity in a large exposure field for SR lithography, is discussed. This method uses a scanning mirror method and electron beam wobbling in combination in SR beamlines. Simulation results show that dose uniformity of ≤ ± 2% will be achieved in the 50-mm-square exposure field by this method. The advantage of this method was confirmed by experiments in the 25-mm-square field.