A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
| العنوان: | A Novel Power MOSFET Structure with Shallow Junction Dual Well Design |
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| المؤلفون: | Chi-Ling Wang, Hsien-Chin Chiu, Yi-Jen Chan, Chien-Nan Liao, Feng-Tso Chien |
| المصدر: | IEICE Transactions on Electronics. :937-942 |
| بيانات النشر: | Institute of Electronics, Information and Communications Engineers (IEICE), 2007. |
| سنة النشر: | 2007 |
| مصطلحات موضوعية: | Engineering, business.industry, Structure (category theory), Electrical engineering, Avalanche breakdown, Electronic, Optical and Magnetic Materials, Dual (category theory), stomatognathic diseases, MOSFET, Shallow junction, Optoelectronics, Power semiconductor device, Electrical and Electronic Engineering, Power MOSFET, business, Energy (signal processing) |
| الوصف: | Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure. |
| تدمد: | 1745-1353 0916-8524 |
| DOI: | 10.1093/ietele/e90-c.5.937 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2174970e2cfde2439bc199f5e75d34cc https://doi.org/10.1093/ietele/e90-c.5.937 |
| رقم الانضمام: | edsair.doi...........2174970e2cfde2439bc199f5e75d34cc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17451353 09168524 |
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| DOI: | 10.1093/ietele/e90-c.5.937 |