Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition
| العنوان: | Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition |
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| المؤلفون: | Song Yang, W. R. Liu, Ja-Hon Lin, Chia-Hung Hsu, B. H. Lin, Chen-Shiung Chang, Wen-Feng Hsieh |
| المصدر: | Crystal Growth & Design. 9:5184-5189 |
| بيانات النشر: | American Chemical Society (ACS), 2009. |
| سنة النشر: | 2009 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), Mineralogy, General Chemistry, Chemical vapor deposition, Thermal treatment, Condensed Matter Physics, Epitaxy, Pulsed laser deposition, Atomic layer deposition, Chemical engineering, General Materials Science, Metalorganic vapour phase epitaxy, Thin film |
| الوصف: | Structural characteristics of the ZnO epitaxial films grown on c-plane sapphire by the atomic layer deposition method were thoroughly studied. The in-plane axes of the c-plane oriented ZnO layers are predominantly aligned with that of the sapphire substrate, yielding the relationship of {1010}ZnO ∥ {1010}Al2O3. The minor orientation with a 30° in-plane twist configuration, that is, {1010}ZnO ∥ {1120}Al2O3, which is more commonly observed in ZnO films grown by metal organic chemical vapor deposition, pulsed laser deposition, and other methods, only amounts to less than 3% and can be eliminated by thermal annealing. The structure of the ZnO epi-films exhibits significantly improvement upon thermal annealing, and intrinsic types of basal plane stacking faults are the predominant structural defects in the ZnO after thermal treatment. The effect of post growth thermal treatment is reported in this work. |
| تدمد: | 1528-7505 1528-7483 |
| DOI: | 10.1021/cg900580r |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2066d18a436e849fafb1438c601a3284 https://doi.org/10.1021/cg900580r |
| رقم الانضمام: | edsair.doi...........2066d18a436e849fafb1438c601a3284 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15287505 15287483 |
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| DOI: | 10.1021/cg900580r |