A Voltage-Controlled Gain Cell Magnetic Memory
| العنوان: | A Voltage-Controlled Gain Cell Magnetic Memory |
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| المؤلفون: | Shehrin Sayed, Sayeef Salahuddin, Cheng-Hsiang Hsu |
| المصدر: | IEEE Electron Device Letters. 42:1452-1455 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Physics, Coupling, Magnetoresistance, business.industry, Transistor, Electronic, Optical and Magnetic Materials, law.invention, Magnetization, Tunnel magnetoresistance, law, Optoelectronics, Electrical and Electronic Engineering, business, Energy (signal processing), Quantum tunnelling, Voltage |
| الوصف: | This letter presents a magnetic gain cell structure that consists of a new kind of voltage-controlled magnetic tunnel junction (MTJ) and two transistors for a large separation in the output current for the two memory states while retaining the low power advantages of a voltage-controlled write mechanism. The voltage-controlled MTJ utilizes the interlayer exchange coupling and the resonant tunneling phenomena to enable a resonant-exchange-controlled (REC) magnetization switching, leading to a substantially low write energy and delay, in the order of 29.5 fJ/bit and 1.6 ns, respectively. Two transistors in a gain cell configuration can provide a 103 times change in the output current between the 0 and 1 states from a ~25% magnetoresistance of the REC MTJ with a high baseline resistance in the order of a few $\text{M}\Omega $ . Such a magnetic gain-cell also exhibits low read energy and delay, in the range of 7.6~39 fJ/bit and 0.6~1 ns, thus promising for low energy, fast, and high-density memory technologies. |
| تدمد: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3105379 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::1f8808e470ce176fd6c6a7969788dbd5 https://doi.org/10.1109/led.2021.3105379 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........1f8808e470ce176fd6c6a7969788dbd5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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| DOI: | 10.1109/led.2021.3105379 |