A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
| العنوان: | A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface |
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| المؤلفون: | Hong Ding, T. Pham, Takahiro Shimizu, Junji Musha, H. Nasu, T. Ogawa, Naoki Kobayashi, Toshiki Hisada, N. Ookuma, Noboru Shibata, G. Hemink, M. Sato, Toshifumi Hashimoto, S. Sakai, K. Kanazawa, Masahiro Yoshihara, Yosuke Kato, Yasuyuki Kajitani, Tomofumi Fujimura, Kazushige Kanda, Tomohiro Sugimoto, G. Liang, Y. Matsumoto, Katsuaki Isobe, K. Iwasa, T. Kobayashi, J. Nakai, M. Inagaki, S. Inoue, T. Ariki, Masaru Koyanagi, M. Watanabe, K. Inuzuka, Yoshinao Suzuki, Naofumi Abiko, M. Kojima, Naoaki Kanagawa, Y. Honda, Y. Utsunomiya, S. Zaitsu, Makoto Miakashi, Mitsuhiro Noguchi, M. Higashitani, D. He, F. Moogat, Hardwell Chibvongodze, Mitsuaki Honma, Teruhiko Kamei, Yuui Shimizu, Cuong Trinh, K. Ino, Michio Nakagawa, Toshihiro Suzuki, Ryuji Yamashita |
| المصدر: | ISSCC |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2013. |
| سنة النشر: | 2013 |
| مصطلحات موضوعية: | Programmable metallization cell, Computer science, Nand flash memory, Flash memory, law.invention, law, Universal memory, Charge trap flash, Racetrack memory, Bubble memory, Electrical and Electronic Engineering, Memory refresh, Double data rate, Flash file system, Computer memory, Dynamic random-access memory, Hardware_MEMORYSTRUCTURES, Sense amplifier, business.industry, Semiconductor memory, Memory controller, Non-volatile memory, Computer data storage, Non-volatile random-access memory, business, Computer hardware |
| الوصف: | NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is achieved by 4b/cell [1] or 3b/cell [2]. The other is focusing on high performance and high reliability. To meet both demands, we develop a 19nm 112.8mm2 64Gb 2b/cell NAND flash memory with the smallest die size ever reported. 15MB/s programming throughput and 400Mb/s/pin 1.8V Toggle Mode interface [3] are achieved for the first time. Die Micrograph and features are shown in Figure 25.1.1. |
| تدمد: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2012.2215094 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::1b3bcf4af4f8a6be127d825af6311ce6 https://doi.org/10.1109/jssc.2012.2215094 |
| رقم الانضمام: | edsair.doi...........1b3bcf4af4f8a6be127d825af6311ce6 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1558173X 00189200 |
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| DOI: | 10.1109/jssc.2012.2215094 |