Competition between band and hopping carrier transport in Ge : Mn thin films

التفاصيل البيبلوغرافية
العنوان: Competition between band and hopping carrier transport in Ge : Mn thin films
المؤلفون: A. I. Dmitriev, Lev I. Buravov
المصدر: Physics of the Solid State. 59:538-542
بيانات النشر: Pleiades Publishing Ltd, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Materials science, Solid-state physics, Condensed matter physics, Magnetism, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Percolation, 0103 physical sciences, Thin film, 010306 general physics, 0210 nano-technology
الوصف: Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.
تدمد: 1090-6460
1063-7834
DOI: 10.1134/s106378341703009x
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0eb2004699bbbf2fe24966d100762729
https://doi.org/10.1134/s106378341703009x
Rights: CLOSED
رقم الانضمام: edsair.doi...........0eb2004699bbbf2fe24966d100762729
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10906460
10637834
DOI:10.1134/s106378341703009x