Competition between band and hopping carrier transport in Ge : Mn thin films
العنوان: | Competition between band and hopping carrier transport in Ge : Mn thin films |
---|---|
المؤلفون: | A. I. Dmitriev, Lev I. Buravov |
المصدر: | Physics of the Solid State. 59:538-542 |
بيانات النشر: | Pleiades Publishing Ltd, 2017. |
سنة النشر: | 2017 |
مصطلحات موضوعية: | Materials science, Solid-state physics, Condensed matter physics, Magnetism, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Percolation, 0103 physical sciences, Thin film, 010306 general physics, 0210 nano-technology |
الوصف: | Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works. |
تدمد: | 1090-6460 1063-7834 |
DOI: | 10.1134/s106378341703009x |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::0eb2004699bbbf2fe24966d100762729 https://doi.org/10.1134/s106378341703009x |
Rights: | CLOSED |
رقم الانضمام: | edsair.doi...........0eb2004699bbbf2fe24966d100762729 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10906460 10637834 |
---|---|
DOI: | 10.1134/s106378341703009x |