التفاصيل البيبلوغرافية
| العنوان: |
Circuit speed oriented device design scheme for double gate hetero tunnel FETs |
| المؤلفون: |
K. Fukuda, N. Nogami, S. Kunisada, Y. Miyamoto |
| المصدر: |
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials. |
| بيانات النشر: |
The Japan Society of Applied Physics, 2019. |
| سنة النشر: |
2019 |
| مصطلحات موضوعية: |
Scheme (programming language), Materials science, business.industry, Optoelectronics, Double gate, business, computer, computer.programming_language |
| DOI: |
10.7567/ssdm.2019.ps-1-21 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3f644eff0c1dcc2c140162aa28db05
https://doi.org/10.7567/ssdm.2019.ps-1-21 |
| رقم الانضمام: |
edsair.doi...........0e3f644eff0c1dcc2c140162aa28db05 |
| قاعدة البيانات: |
OpenAIRE |