Physical model for enhanced interface-trap formation at low dose rates
| العنوان: | Physical model for enhanced interface-trap formation at low dose rates |
|---|---|
| المؤلفون: | Sokrates T. Pantelides, Sergey N. Rashkeev, Ronald D. Schrimpf, C.R. Cirba, S.C. Witczak, A. Michez, Daniel M. Fleetwood |
| المصدر: | IEEE Transactions on Nuclear Science. 49:2650-2655 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2002. |
| سنة النشر: | 2002 |
| مصطلحات موضوعية: | Condensed Matter::Quantum Gases, chemistry.chemical_classification, Nuclear and High Energy Physics, Materials science, Base (chemistry), Bipolar junction transistor, Oxide, Trapping, Molecular physics, Space charge, Trap (computing), chemistry.chemical_compound, Nuclear Energy and Engineering, chemistry, Electronic engineering, Sensitivity (control systems), Electrical and Electronic Engineering, Free parameter |
| الوصف: | We describe a model for enhanced interface-trap formation at low dose rates due to space-charge effects in the base oxides of bipolar devices. The use of analytical models allows one to reduce significantly the number of free parameters of the theory and to elucidate the main physical mechanisms that are responsible for interface-trap and oxide-trap formation processes. We found that the hole trapping in the oxide cannot be responsible for all the enhanced low-dose-rate sensitivity (ELDRS) effects in SiO/sub 2/, and the contribution of protons is also essential. The dynamics of interface-trap formation are defined by the relation between the proton mobility (transport time of the protons across the oxide) and the time required for positive-charge buildup near the interface due to trapped holes. The analytically estimated and numerically calculated interface-trap densities were found to be in very good agreement with available experimental data. |
| تدمد: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2002.805387 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::0d623d0e537d45f1692da3aec2a1f611 https://doi.org/10.1109/tns.2002.805387 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........0d623d0e537d45f1692da3aec2a1f611 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581578 00189499 |
|---|---|
| DOI: | 10.1109/tns.2002.805387 |