Study of the initial stage of GaAs growth on FIB-modified silicon substrates
| العنوان: | Study of the initial stage of GaAs growth on FIB-modified silicon substrates |
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| المؤلفون: | M M Eremenko, N A Shandyba, N E Chernenko, M S Solodovnik, S V Balakirev, O A Ageev |
| المصدر: | Journal of Physics: Conference Series. 2086:012007 |
| بيانات النشر: | IOP Publishing, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | History, Computer Science Applications, Education |
| الوصف: | In this work, we studied the effect of the deposition thickness, growth rate, arsenic flux, and implantation dose on the morphology of the GaAs nanostructures grown on modified Si areas. It is shown that an increase in the growth rate at the initial stages of the growth process leads to the transition of the growth regime from layered-like to one-dimensional with the formation of nanowires. Studies of the effect of As4 pressure have shown that a change in the equivalent As4 flux in the range of 3.7 - 5.0 ML/s does not lead to any significant change in the structure of the GaAs layer in the modified areas. An increase in the implantation dose during processing with a focused ion beam led to disordering of the directions of the grown nanowires due to the degradation of the substrate crystal structure. |
| تدمد: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/2086/1/012007 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::09fc948e6a3456a81afe07fbea71bff8 https://doi.org/10.1088/1742-6596/2086/1/012007 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........09fc948e6a3456a81afe07fbea71bff8 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17426596 17426588 |
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| DOI: | 10.1088/1742-6596/2086/1/012007 |