Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test Methods
العنوان: | Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test Methods |
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المؤلفون: | Chao-Yang Ke, Yu-Chia Tsui, Bing-Yue Tsui, Ming-Dou Ker |
المصدر: | 2023 IEEE International Reliability Physics Symposium (IRPS). |
بيانات النشر: | IEEE, 2023. |
سنة النشر: | 2023 |
DOI: | 10.1109/irps48203.2023.10118299 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::07df3155df8aea89716f1085bcd3ad0c https://doi.org/10.1109/irps48203.2023.10118299 |
Rights: | CLOSED |
رقم الانضمام: | edsair.doi...........07df3155df8aea89716f1085bcd3ad0c |
قاعدة البيانات: | OpenAIRE |
DOI: | 10.1109/irps48203.2023.10118299 |
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