Vortex Transitional Memory Developed with Nb 4-Layer, 10-kA/cm(2) Fabrication Process
| العنوان: | Vortex Transitional Memory Developed with Nb 4-Layer, 10-kA/cm(2) Fabrication Process |
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| المؤلفون: | Komura, Yuto, Tanaka, Masamitsu, Fujimaki, Akira, Shuichi Nagasawa, Bozbey, Ali |
| المساهمون: | TOBB ETU, Faculty of Engineering, Department of Electrical & Electronics Engineering, TOBB ETÜ, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü, Bozbey, Ali |
| المصدر: | Publons |
| مصطلحات موضوعية: | Fluxes, networks (circuits), single flux |
| الوصف: | 15th International Superconductive Electronics Conference (2016 : Nagoya; Japan) We report random access memories (RAMs) based on vortex transitional (VT) memory cell developed with the newly developed AIST 10-kA/cm(2), Nb 4-layer fabrication process, called High-Speed Standard Process (HSTP). We obtained more effective mutual coupling structure by fully use of all the wiring layer, and successfully reduced the cell size to 25 mu m square, which indicated roughly 50% increase in density compared to the previous design. We reduced the critical currents of Josephson junctions and load resistance to be matched with driving circuitry. We tested the miniaturized VT memory cell, and obtained a sufficient margin width of similar to 15%, and also confirmed correct operations of the other components, including a latching driver and address decoder. |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::16427aa45928cffcc7d62d27309c6d77 https://publons.com/publon/30084246/ |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.dedup.wf.001..16427aa45928cffcc7d62d27309c6d77 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |