In situformation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal

التفاصيل البيبلوغرافية
العنوان: In situformation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal
المؤلفون: Longchamp, J.-N., Erbudak, M., Weisskopf, Y., Longchamp, J.-N., Erbudak, M., Weisskopf, Y.
المصدر: Journal de Physique IV - Proceedings; March 2006, Vol. 132 Issue: 1 p117-120, 4p
مستخلص: Growth of thin Si films deposited on the 5-fold symmetry surface of the icosahedral Al-Pd-Mn quasicrystal is monitored by low-energy electron diffraction, secondary-electron imaging, and Auger electron spectroscopy. We observe that below a sample temperature of 370 K, Si grows in an amorphous structure. Above 370 K, a new Al-Pd-Mn-Si quasicrystalline phase, which exhibits the same icosahedral symmetry as the substrate, is formed at the surface by substitutionally replacing Al by absorbed Si.
قاعدة البيانات: Supplemental Index
الوصف
تدمد:11554339
17647177
DOI:10.1051/jp4:2006132023