Periodical
(Invited) Material Considerations for the Development of III-Nitride Power Devices
| العنوان: | (Invited) Material Considerations for the Development of III-Nitride Power Devices |
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| المؤلفون: | Sarkar, Biplab, Reddy, Pramod, Kaess, Felix, Haidet, Brian, Tweedie, James, Mita, Seiji, Kirste, Ronny, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko |
| المصدر: | ECS Transactions; August 2017, Vol. 80 Issue: 7 p29-36, 8p |
| مستخلص: | With advancement in growth of native III-nitride substrates, remarkable progress has been made to extend the functionality of GaN based power electronic devices. The low dislocation epitaxial films grown on native substrates outperforms the films grown on foreign substrates. However, several material considerations has to be incorporated in order to exploit the full potential of GaN and AlxGa1-xN (0 |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 19385862 19386737 |
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