التفاصيل البيبلوغرافية
| العنوان: |
Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique |
| المؤلفون: |
Sebaai, Farid, Vereecke, Guy, Xu, Xiu Mei, Baudot, Sylvain, Amemiya, Fumihiro, Komori, Kana, Holsteyns, Frank |
| المصدر: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2018, Vol. 282 Issue: 1 p190-193, 4p |
| مستخلص: |
The continuous down scaling of the dimensions for the logic devices has imposed to carefully track the pattern collapse issue when cleaning after FIN etch. Showing the limitations of the hot IPA drying technique toward scaled FIN dimensions, a cleaning using a surface modification drying technique has been proposed and successfully implemented. It is also discussed the use of some post treatment solutions to remove the grafted layer used to modify the FIN surface while preserving the integrity of the FIN structures. |
| قاعدة البيانات: |
Supplemental Index |