التفاصيل البيبلوغرافية
| العنوان: |
Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-Rich Silicon Nitride Gate Dielectric. |
| المؤلفون: |
K. Remashan, Y. S. Choi, S. J. Park, J. H. Jang |
| المصدر: |
Journal of The Electrochemical Society; 2010, Vol. 157 Issue 1, pH60-H64, 5p |
| مصطلحات موضوعية: |
THIN film transistors, ZINC oxide thin films, METAL organic chemical vapor deposition, SILICON nitride, DIELECTRICS, ELECTRIC potential |
| مستخلص: |
Thin-film transistors (TFTs) on glass substrates were fabricated using ZnO, grown by a metallorganic chemical vapor deposition (MOCVD) technique, with Nand Si-rich silicon nitrides as gate dielectrics. This is a report on MOCVD-grown ZnO TFfs that use silicon nitride as gate dielectrics. The ZnO TETs using N-rich silicon nitride exhibited a field-effect mobility of 6.5 cm2/V s, a subthreshold slope of 0.8 V/decade, an on/off current ratio of 108, and a threshold voltage of 2.05 V. The performance of these TFTs is better than that of TFTs employing Si-rich silicon nitride. This enhanced device performance can be attributed to a larger average grain size of 126 nm observed in the ZnO film grown on the N-rich silicon nitride compared to an average grain size of 69 nm for the ZnO film grown on Si-rich silicon nitride. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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