التفاصيل البيبلوغرافية
| العنوان: |
An activation energy study of the microstructural changes in Al-1%Si interconnects. |
| المؤلفون: |
Stulens, H., Knuyt, G., De Ceuninck, W., De Schepper, L., Stals, L. |
| المصدر: |
Journal of Applied Physics; 2/15/1994, Vol. 75 Issue 4, p2270, 8p |
| مصطلحات موضوعية: |
ATMOSPHERIC temperature, ALUMINUM compounds, SILICON compounds |
| مستخلص: |
Presents a study that examined a method of extracting a spectrum of activation energies from an isothermal and a constant heating rate experiment. Description of microstructural changes in aluminum-silicon compounds; Characteristics of microstructural relaxation mechanisms; Temperature dependence of the derivative of the electrical resistance. |
| قاعدة البيانات: |
Complementary Index |