Academic Journal
Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices.
| العنوان: | Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices. |
|---|---|
| المؤلفون: | Bassani, F., Tatarenko, S., Saminadayar, K., Magnea, N., Cox, R. T., Tardot, A., Grattepain, C. |
| المصدر: | Journal of Applied Physics; 10/1/1992, Vol. 72 Issue 7, p2927, 14p |
| مصطلحات موضوعية: | SEMICONDUCTOR doping, CADMIUM, QUANTUM wells, DOPED semiconductor superlattices |
| مستخلص: | Describes the work on indium doping of CdTe epilayers. Information on the growth procedure and characterization techniques; Role of cadmium overpressure; Discussion on uniform and planar doping of CdTe epilayers; Description of the local doping of CdTe/CZT quantum wells and superlattices. |
| قاعدة البيانات: | Complementary Index |
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