Academic Journal

Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices.

التفاصيل البيبلوغرافية
العنوان: Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices.
المؤلفون: Bassani, F., Tatarenko, S., Saminadayar, K., Magnea, N., Cox, R. T., Tardot, A., Grattepain, C.
المصدر: Journal of Applied Physics; 10/1/1992, Vol. 72 Issue 7, p2927, 14p
مصطلحات موضوعية: SEMICONDUCTOR doping, CADMIUM, QUANTUM wells, DOPED semiconductor superlattices
مستخلص: Describes the work on indium doping of CdTe epilayers. Information on the growth procedure and characterization techniques; Role of cadmium overpressure; Discussion on uniform and planar doping of CdTe epilayers; Description of the local doping of CdTe/CZT quantum wells and superlattices.
قاعدة البيانات: Complementary Index
الوصف
تدمد:00218979
DOI:10.1063/1.351496