التفاصيل البيبلوغرافية
| العنوان: |
A Monte Carlo approach for incorporation of memory effect in switch gate bias experiments. |
| المؤلفون: |
Subbaraman, Shaila, Sharma, D.K., Vasi, J., Das, A. |
| المصدر: |
Journal of Applied Physics; 3/15/1998, Vol. 83 Issue 6, p3419, 4p, 2 Diagrams, 4 Graphs |
| مصطلحات موضوعية: |
PHYSICS, IONS, SILICA |
| مستخلص: |
Examines the Monte Carlo approach in the simulation of the dispersive transport of the holes/H+ ions in silicon-dioxide. Information on the hydrogen ion transport; Indication of results; How the simulations were performed. |
| قاعدة البيانات: |
Complementary Index |