التفاصيل البيبلوغرافية
| العنوان: |
COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs. |
| المؤلفون: |
ARABSHAHI, H., KHALVATI, M. R., ROKN-ABADI, M. REZAEE |
| المصدر: |
Modern Physics Letters B; 7/10/2008, Vol. 22 Issue 17, p1695-1702, 8p, 2 Charts, 5 Graphs |
| مصطلحات موضوعية: |
ESTIMATION theory, MONTE Carlo method, PARTICLES (Nuclear physics), ELECTROMAGNETIC fields, FREE electron theory of metals, ELECTRON transport, STOCHASTIC processes |
| مستخلص: |
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 400 kVm-1 for the case of GaAs, 300 kVm-1 for InAs and 700 kVm-1 for InP. We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm GaAs sample to be a bout 3 ps. Similar calculations for InAs and InP yield 2.2 and 5 ps, respectively. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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