التفاصيل البيبلوغرافية
| العنوان: |
Experimental and theoretical study of heterogeneous iron precipitation in silicon. |
| المؤلفون: |
Haarahiltunen, A., Väinölä, H., Anttila, O., Yli-Koski, M., Sinkkonen, J. |
| المصدر: |
Journal of Applied Physics; 2/15/2007, Vol. 101 Issue 4, p043507-N.PAG, 6p, 5 Graphs |
| مصطلحات موضوعية: |
HETEROGENEITY, OXIDES, SEMICONDUCTOR wafers, TEMPERATURE, EQUATIONS, MATHEMATICS |
| مستخلص: |
Heterogeneous iron precipitation in silicon was studied experimentally by measuring the gettering efficiency of oxide precipitate density of 1×1010 cm-3. The wafers were contaminated with varying iron concentrations, and the gettering efficiency was studied using isothermal annealing in the temperature range from 300 to 780 °C. It was found that iron precipitation obeys the so-called s-curve behavior: if iron precipitation occurs, nearly all iron is gettered. For example, after 30 min annealing at 700 °C, the highest initial iron concentration of 8×1013 cm-3 drops to 3×1012 cm-3, where as two lower initial iron concentrations of 5×1012 and 2×1013 cm-3 remain nearly constant. This means that the level of supersaturation plays a significant role in the final gettering efficiency, and a rather high level of supersaturation is required before iron precipitation occurs at all. In addition, a model is presented for the growth and dissolution of iron precipitates at oxygen-related defects in silicon during thermal processing. The heterogeneous nucleation of iron is taken into account by special growth and dissolution rates, which are inserted into the Fokker-Planck equation. Comparison of simulated results to experimental ones proves that this model can be used to estimate internal gettering efficiency of iron under a variety of processing conditions. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |