التفاصيل البيبلوغرافية
| العنوان: |
An electron paramagnetic resonance study of n-type Zn1-xMnxO: A diluted magnetic semiconductor. |
| المؤلفون: |
Ben Mahmoud, A., von Bardeleben, H. J., Cantin, J. L., Chikoidze, E., Mauger, A. |
| المصدر: |
Journal of Applied Physics; 1/1/2007, Vol. 101 Issue 1, p013902-N.PAG, 8p, 1 Chart, 11 Graphs |
| مصطلحات موضوعية: |
ELECTRON paramagnetic resonance, MAGNETIC resonance, PARAMAGNETISM, ANTIFERROMAGNETISM, SEMICONDUCTORS, TEMPERATURE, FREEZING points, SPIN labels, RESEARCH |
| مستخلص: |
We present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1-xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire concentration range with an effective exchange integral of J/kB=-21.8 K for x<=0.16 much stronger than in the CdMn(S,Se,Te) series. We observe deviations from the Curie-Weiss behavior for concentrations above x=0.16 and show this to be a “universal” behavior of II-VI diluted magnetic semiconductors. Our results demonstrate that AF interactions are dominating in n-type Zn1-xMnxO (x>0.07) with a carrier concentration of 1018 cm-3 contrary to previous claims. These AF interactions are responsible for high spin freezing temperatures and absence of magnetic long range order. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |