Effects of Ge and B Concentration in Selective Epitaxial Growth of Si1-XGex(:B) at Low-Temperature.

التفاصيل البيبلوغرافية
العنوان: Effects of Ge and B Concentration in Selective Epitaxial Growth of Si1-XGex(:B) at Low-Temperature.
المؤلفون: Shin, Hyerin, Yoon, Dongmin, Ko, Dae-Hong
المصدر: ECS Meeting Abstracts; 2024, Vol. MA2024 Issue 2, p5099-5099, 1p
قاعدة البيانات: Complementary Index
الوصف
تدمد:10918213
DOI:10.1149/MA2024-02335099mtgabs