Periodical
Effects of Ge and B Concentration in Selective Epitaxial Growth of Si1-XGex(:B) at Low-Temperature.
العنوان: | Effects of Ge and B Concentration in Selective Epitaxial Growth of Si |
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المؤلفون: | Shin, Hyerin, Yoon, Dongmin, Ko, Dae-Hong |
المصدر: | ECS Meeting Abstracts; 2024, Vol. MA2024 Issue 2, p5099-5099, 1p |
قاعدة البيانات: | Complementary Index |
تدمد: | 10918213 |
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DOI: | 10.1149/MA2024-02335099mtgabs |