التفاصيل البيبلوغرافية
| العنوان: |
Characterisation of 3D trench silicon pixel sensors irradiated at 1 ⋅1017 1 MeV neq cm-2. |
| المؤلفون: |
Addison, M., Bellora, A., Borgato, F., Brundu, D., Cardini, A., Cossu, G. M., Dalla Betta, G. F., La Delfa, L., Lai, A., Lampis, A., Loi, A., Obertino, M. M., Vecchi, S., Verdoglia, M. |
| المصدر: |
Frontiers in Physics; 2024, p1-12, 12p |
| مصطلحات موضوعية: |
PARTICLE detectors, NUCLEAR counters, VERTEX detectors, SILICON detectors, HADRON colliders |
| مستخلص: |
The 3D trench silicon pixel sensors developed by the TimeSPOT collaboration have demonstrated exceptional performance, even after exposure to extreme radiation fluences up to 1 ⋅ 1 0 17 1 MeV n e q / cm 2 . This study assesses the radiation tolerance of these sensors using minimum ionizing particles during a beam test campaign. The results indicate that while radiation damage reduces charge collection efficiency and overall detection efficiency, these losses can be mitigated to levels comparable to non-irradiated sensors by increasing the reverse bias voltage. Charge multiplication was observed and characterised for the first time in 3D trench sensors, revealing a distinct operating regime post-irradiation achievable at bias voltages close to 300 V. Additionally, the timing performance of irradiated sensors remains comparable to their non-irradiated counterparts, underscoring their resilience to radiation damage. Currently, 3D trench silicon detectors are among the fastest and most radiation-hard pixel sensors available for vertex detectors in high-energy physics colliders. These findings highlight the potential of these sensors for new 4D tracking systems of future experiments at the Future Circular Hadron Collider (FCC-hh), advancing the capabilities of radiation-hard sensor technology. [ABSTRACT FROM AUTHOR] |
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