التفاصيل البيبلوغرافية
| العنوان: |
Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias. |
| المؤلفون: |
Chen, Cong, Cai, Yumeng, Sun, Peng, Zhao, Zhibin |
| المصدر: |
IET Power Electronics (Wiley-Blackwell); 11/25/2024, Vol. 17 Issue 15, p2393-2404, 12p |
| مصطلحات موضوعية: |
THERMAL stresses, CHARGE exchange, THRESHOLD voltage, RELIABILITY of electronics, SEMICONDUCTOR devices |
| مستخلص: |
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +VGS, the relationship between VTH shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the VTH shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −VGS, the VTH shift is very small. Moreover, when the negative VGS decreases, the VTH shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of VTH shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages. [ABSTRACT FROM AUTHOR] |
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