التفاصيل البيبلوغرافية
| العنوان: |
Room temperature electrical characteristics of gold-hyperdoped silicon. |
| المؤلفون: |
Lim, Shao Qi, Warrender, Jeffrey M., Notthoff, Christian, Ratcliff, Thomas, Williams, Jim S., Johnson, Brett C. |
| المصدر: |
Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-6, 6p |
| مصطلحات موضوعية: |
DEBYE temperatures, HALL effect, NEAR infrared radiation, ION implantation, SILICON, SILICON nanowires |
| مستخلص: |
Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |