التفاصيل البيبلوغرافية
| العنوان: |
Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films. |
| المؤلفون: |
Zheng, Y. B., Wang, S. J., Huan, A. C. H., Tan, C. Y., Yan, L., Ong, C. K. |
| المصدر: |
Applied Physics Letters; 3/14/2005, Vol. 86 Issue 11, p112910, 3p, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
THIN films, SOLID state electronics, THICK films, SPECTRUM analysis, ELECTRON spectroscopy, MOLECULAR orbitals, MOLECULAR spectroscopy |
| مستخلص: |
The Al2O3-incorporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |