التفاصيل البيبلوغرافية
| العنوان: |
Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN. |
| المؤلفون: |
Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Chen, Jun, Sekiguchi, Takashi, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Hono, Kazuhiro |
| المصدر: |
Journal of Applied Physics; May2023, Vol. 133 Issue 18, p1-9, 9p |
| مصطلحات موضوعية: |
ATOM-probe tomography, SCANNING transmission electron microscopy, GALLIUM nitride, ION implantation |
| مستخلص: |
We have investigated the impact of high-temperature Mg-implantation in GaN layers on distribution of Mg-enriched defects using scanning transmission electron microscopy and atom probe tomography. For this, 1 × 1019 cm−3 Mg ions have been implanted in GaN layers at room temperature (RT) and 1000 °C, followed by annealing at 1300 °C. A smaller number of Mg-enriched defects were observed in the sample implanted at 1000 °C in comparison to the sample implanted at RT. The implantation of Mg ions at 1000 °C resulted in a higher amount of randomly distributed Mg in the GaN matrix, which, in turn, leads to more uniform and enhanced donor–acceptor pair emission, leading to higher Mg activation. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |