التفاصيل البيبلوغرافية
| العنوان: |
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors. |
| المؤلفون: |
Ramos, David, Delmas, Marie, Ivanov, Ruslan, Žurauskaitė, Laura, Evans, Dean, Almqvist, Susanne, Becanovic, Smilja, Hellström, Per-Erik, Costard, Eric, Höglund, Linda |
| المصدر: |
Opto-Electronics Review; 2023 Special Issue, Vol. 31, p1-7, 7p |
| مصطلحات موضوعية: |
SUPERLATTICES, INFRARED detectors, PHOTODIODES, FABRICATION (Manufacturing), PIXELS |
| مستخلص: |
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 µm with n-on-p polarity. A lateral diffusion length of 16 µm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 µm pitch, and a potential operating temperature up to 100 K is demonstrated. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |